000 | 01578cam a22003854a 4500 | ||
---|---|---|---|
001 | 14105581 | ||
003 | OSt | ||
005 | 20180709123050.0 | ||
008 | 050912s2006 nyua b 001 0 eng c | ||
010 | _a 2005933746 | ||
015 |
_aGBA581849 _2bnb |
||
016 | 7 |
_a013301275 _2Uk |
|
020 | _a9781441939159 (pbk.) | ||
035 | _a(OCoLC)ocm61756769 | ||
040 |
_aUKM _cIISER Bhopal |
||
042 | _apcc | ||
050 | 0 | 0 |
_aT174.7 _b.L86 2006 |
082 |
_223 _a621.3815 L972N |
||
100 | 1 |
_aLundstrom, Mark. _923072 |
|
222 | _aEECS-reference book collection | ||
245 | 1 | 0 |
_aNanoscale transistors : _bdevice physics, modeling and simulation _cMark S. Lundstrom, Jing Guo. |
260 |
_aNew York : _bSpringer, _c2010. |
||
300 |
_avi, 217 p. : _bill. ; _c24 cm. |
||
504 | _aIncludes bibliographical references and index. | ||
650 | 0 |
_aNanotechnology. _923073 |
|
650 | 0 |
_aMetal oxide semiconductor field-effect transistors _xMathematical models. _923074 |
|
650 | 0 |
_aNanostructured materials _xMathematical models. _923075 |
|
700 | 1 |
_aGuo, Jing. _923076 |
|
856 | 4 | 1 |
_3Table of contents only _uhttp://www.loc.gov/catdir/toc/fy0608/2005933746.html |
856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/enhancements/fy0663/2005933746-d.html |
856 | 4 | 2 |
_3Contributor biographical information _uhttp://www.loc.gov/catdir/enhancements/fy0819/2005933746-b.html |
906 |
_a7 _bcbc _cpccadap _d2 _eepcn _f20 _gy-gencatlg |
||
942 |
_2ddc _cBK |
||
999 |
_c8507 _d8507 |