000 01578cam a22003854a 4500
001 14105581
003 OSt
005 20180709123050.0
008 050912s2006 nyua b 001 0 eng c
010 _a 2005933746
015 _aGBA581849
_2bnb
016 7 _a013301275
_2Uk
020 _a9781441939159 (pbk.)
035 _a(OCoLC)ocm61756769
040 _aUKM
_cIISER Bhopal
042 _apcc
050 0 0 _aT174.7
_b.L86 2006
082 _223
_a621.3815 L972N
100 1 _aLundstrom, Mark.
_923072
222 _aEECS-reference book collection
245 1 0 _aNanoscale transistors :
_bdevice physics, modeling and simulation
_cMark S. Lundstrom, Jing Guo.
260 _aNew York :
_bSpringer,
_c2010.
300 _avi, 217 p. :
_bill. ;
_c24 cm.
504 _aIncludes bibliographical references and index.
650 0 _aNanotechnology.
_923073
650 0 _aMetal oxide semiconductor field-effect transistors
_xMathematical models.
_923074
650 0 _aNanostructured materials
_xMathematical models.
_923075
700 1 _aGuo, Jing.
_923076
856 4 1 _3Table of contents only
_uhttp://www.loc.gov/catdir/toc/fy0608/2005933746.html
856 4 2 _3Publisher description
_uhttp://www.loc.gov/catdir/enhancements/fy0663/2005933746-d.html
856 4 2 _3Contributor biographical information
_uhttp://www.loc.gov/catdir/enhancements/fy0819/2005933746-b.html
906 _a7
_bcbc
_cpccadap
_d2
_eepcn
_f20
_gy-gencatlg
942 _2ddc
_cBK
999 _c8507
_d8507